AS4C8M32S datasheet(2/55 Pages) ALSC

2 / 55 page

AS4C8M32S

Alliance Memory, Inc.

551 Taylor Way, San Carlos, CA 94070

TEL: (650) 610-6800

FAX: (650) 620-9211

Alliance Memory, Inc. reserves the right to change products or specification without notice.

8M x 32 bit Synchronous DRAM (SDRAM)

Confidential

Advanced (Rev.

2.0 May /2014)

Features

 Fast access time from clock: 5/5.4 ns

 Fast clock rate: 166/1

43MHz

 Fully synchronous operation

 Internal pipelined architecture

 2M word x 32-bit x 4-bank

 Programmable Mode registers

- CAS Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential & interleaved

- Burst stop function

 Auto Refresh and Self Refresh

 Operating temperature range

- Commercial (0 ~ 70°C)

- Industrial (-40 ~ 85°C)

 4096 refresh cycles/64ms

 CKE power down mode

 Single +3.3V power supply

 Interface: LVTTL

 90-ball, 8.0 x 13 x 1.4mm TFBGA package

- Pb and Halogen Free

Overview

The 256Mb AS4C8M32S SDRAM is a high-

speed CMOS synchronous DRAM containing 256

Mbits. It is internally configured as 4 Banks of 2M

word x 32 DRAM with a synchronous interface (all

signals are registered on the positive edge of the

clock signal, CLK). Read and write accesses to the

SDRAM are burst oriented; accesses start at a

selected location and continue for a programmed

number of locations in a programmed sequence.

Accesses

begin

with

the

registration

BankActivate command which is then followed by a

Read or Write command.

The SDRAM provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with

a burst termination option. An auto precharge

function may be enabled to provide a self-timed row

precharge that is initiated at the end of the burst

sequence. The refresh functions, either Auto or Self

Refresh are easy to use.

By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well

suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications

Table 1. Key Specifications

AS4C8M32S

-6/7

tCK3

Clock Cycle time(min.)

6/7.5 ns

tAC3

Access time from CLK (max.)

5/5.4 ns

tRAS

Row Active time(min.)

42/45 ns

tRC

Row Cycle time(min.)

60/67.5 ns

Table 2.Ordering Information

Part Number

Frequency

Package

Temperature

Temp Range

AS4C8M32S-6BIN

166MHz

90-ball TFBGA

Industrial

-40 ~ 85°C

AS4C8M32S-7BCN

43MHz

90-ball TFBGA

Commercial

0 ~ 70°C

B: indicates 90-ball (8.0 x 13 x 1.4mm) TFBGA package

N: indicates Pb and Halogen Free ROHS

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