MDP9N60 datasheet(2/6 Pages) MGCHIP

2 / 6 page

Dec. 2014 Version 2.2

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP9N60TH

-55~150

TO-220

Tube

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

600

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

3.0

5.0

Drain Cut-Off Current

IDSS

VDS = 600V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

100

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 4.5A

0.65

0.75

Forward Transconductance

gfs

VDS = 30V, ID = 4.5A

7.0

Dynamic Characteristics

Total Gate Charge

VDS = 480V, ID = 9.0A, VGS = 10V

(3)

Gate-Source Charge

Qgs

8.2

Gate-Drain Charge

Qgd

10.7

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

1160

Reverse Transfer Capacitance

Crss

6.2

Output Capacitance

Coss

134

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 300V, ID = 9.0A,

RG = 25Ω

(3)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

9.0

Source-Drain Diode Forward

Voltage

VSD

IS = 9.0A, VGS = 0V

1.4

Body Diode Reverse Recovery

Time

trr

IF = 9.0A, dl/dt = 100A/μs

(3)

360

Body Diode Reverse Recovery

Charge

Qrr

3.9

μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

ISD ≤9.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C

4. L=10.8mH,

IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C

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