AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

AS6C2008A-55

PARAMETER

SYM.

UNIT

Read Cycle Time

Address Access Time

Chip Enable Access Time

Output Enable Access Time

Chip Enable to Output in Low-Z

Output Enable to Output in Low-Z

Chip Disable to Output in High-Z

Output Disable to Output in High-Z

Output Hold from Address Change

(2) WRITE CYCLE

AS6C2008A-55

PARAMETER

SYM.

UNIT

Write Cycle Time

Address Valid to End of Write

Chip Enable to End of Write

Address Set-up Time

Write Pulse Width

Write Recovery Time

Data to Write Time Overlap

Data Hold from End of Write Time

Output Active from End of Write

Write to Output in High-Z

*These parameters are guaranteed by device characterization, but not production tested.

512K X 8 BIT LOW POWER CMOS SRAM

January 2007

256K X 8 BIT LOW POWER CMOS SRAM

AUGUST 2007

AS6C2008A

AUGUST/2007, V 1.0

Alliance Memory Inc.

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