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MDP1901TH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

Part # MDP1901TH
Description  Single N-channel Trench MOSFET 100V, 36A, 22m(ohm)
PDF  6 Pages
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDP1901TH Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
1
Absolute Maximum Ratings (Tc = 25
oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25
oC
ID
36
A
TC=100
oC
24
A
Pulsed Drain Current
IDM
144
A
Power Dissipation
TC=25
oC
PD
34
W
TC=100
oC
14
Single Pulse Avalanche Energy
(2)
EAS
200
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
RθJA
40
oC/W
Thermal Resistance, Junction-to-Case
RθJC
2.3
MDP1901
Single N-channel Trench MOSFET 100V, 36A, 22
mΩ
Features
VDS = 100V
ID = 36A @VGS = 10V
RDS(ON)
< 22m
Ω @VGS = 10V
< 25m
Ω @VGS = 6.0V
General Description
The MDP1901 uses advanced MagnaChip
’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1901 is suitable device for DC/DC Converters
and general purpose applications.
D
G
S
S
G
D


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