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MDS5652 Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MDS5652 Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 6 page ![]() March. 2009. Version 0.0 MagnaChip Semiconductor Ltd . 2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDS5652URH -55~150 oC SOIC-8 Tape & Reel Halogen Free Electrical Characteristics (TJ =25 oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 µA Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V - - 100 ㎁ Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.9 3 V VGS = 10V, ID = 7.5A - 16 22 Static Drain to Source On Resistance RDS(ON) VGS = 4.5V, ID = 5.0A 23 35 m Forward Transconductance gFS VDS = 5V, ID = 7.5A 25 - S Dynamic Characteristics Total Gate Charge Qg(10V) - 11.7 - Total Gate Charge Qg(4.5V) 6.1 Gate to Source Charge Qgs - 2.1 - Gate to Drain Charge Qgd VDD = 30V, ID = 7.5A, VGS = 10V - 3.2 - nC Input Capacitance Ciss - 460 - Reverse Transfer Capacitance Crss - 58 - Output Capacitance Coss VDS = 30V, VGS = 0V, f = 1.0MHz - 154 - pF Turn-On Delay Time td(on) - 3.8 - Turn-On Rise Time tr - 24.6 - Turn-Off Delay Time td(off) - 17.4 - Turn-Off Fall Time tf VGS = 10V ,VDD = 15V, RL = 2.1 , RGEN = 3 - 10.6 - ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.75 V Body Diode Reverse Recovery Time trr - 16 - ns Body Diode Reverse Recovery Charge Qrr IF = 7.5A, di/dt = 100A/µs - 7.5 - nC Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V |
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