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MDS5652 Datasheet(PDF) 2 Page - MagnaChip Semiconductor.

Part # MDS5652
Description  Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m(ohm)
PDF  6 Pages
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDS5652 Datasheet(HTML) 2 Page - MagnaChip Semiconductor.

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March. 2009. Version 0.0
MagnaChip Semiconductor Ltd
.
2
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDS5652URH
-55~150
oC
SOIC-8
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25
oC unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
1
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
100
㎁
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1
1.9
3
V
VGS = 10V, ID = 7.5A
-
16
22
Static Drain to Source On Resistance
RDS(ON)
VGS = 4.5V, ID = 5.0A
23
35
m
Forward Transconductance
gFS
VDS = 5V, ID = 7.5A
25
-
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
-
11.7
-
Total Gate Charge
Qg(4.5V)
6.1
Gate to Source Charge
Qgs
-
2.1
-
Gate to Drain Charge
Qgd
VDD = 30V, ID = 7.5A,
VGS = 10V
-
3.2
-
nC
Input Capacitance
Ciss
-
460
-
Reverse Transfer Capacitance
Crss
-
58
-
Output Capacitance
Coss
VDS = 30V, VGS = 0V,
f = 1.0MHz
-
154
-
pF
Turn-On Delay Time
td(on)
-
3.8
-
Turn-On Rise Time
tr
-
24.6
-
Turn-Off Delay Time
td(off)
-
17.4
-
Turn-Off Fall Time
tf
VGS = 10V ,VDD = 15V,
RL = 2.1 , RGEN = 3
-
10.6
-
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 1A, VGS = 0V
-
0.75
V
Body Diode Reverse Recovery Time
trr
-
16
-
ns
Body Diode Reverse Recovery Charge
Qrr
IF = 7.5A, di/dt = 100A/µs
-
7.5
-
nC
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V



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