MDU3603 datasheet(1/7 Pages) MGCHIP

Part #	MDU3603

Description	Single P-Channel Trench MOSFET, -30V, -67A, 9.1m(ohm)

PDF	7 Pages

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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1 / 7 page

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta =25

oC unless otherwise noted)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±25

V

Continuous Drain Current (Silicon limited)

ID

-67

A

Pulsed Drain Current

IDM

-120

A

Power Dissipation

(Note 1)

PD

2.5

W

Single Pulse Avalanche Energy

(Note 2)

EAS

112.5

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(Note 1)

RθJA

50

oC/W

Thermal Resistance, Junction-to-Case

RθJC

2

MDU3603

Single P-Channel Trench MOSFET, -30V, -67A, 9.1m

General Description

The MDU3603 uses advanced MagnaChip’s MOSFET

Technology to provide low on-state resistance.

This device is suited for Power Management and load

switching applications common in Notebook Computers

and Portable Battery Packs.

Features

VDS = -30V

ID = -67A @VGS = -10V

RDS(ON)

< 7.5m

@VGS = -20V

< 9.1m

@VGS = -10V

< 13.6m

@VGS = -5V

Applications

Load Switch

General purpose applications

Smart Module for Note PC Battery

D

G

S

G

S

PDFN56

S

G

S

D

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MDU3603 Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

MDU3603 Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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