MMD80R900PC Datasheet

Mar. 2014 Revision 1.0

MagnaChip Semiconductor Ltd.

1

Parameter

Value

Unit

850

V

0.9

Ω

3

V

6

A

17.6

nC

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD80R900PCRH

80R900P

-55 ~ 150℃

TO-252

(D-PAK)

Reel & Tape

Halogen Free

MMD80R900PC

800V 0.9Ω N-channel MOSFET

 Description

MMD80R900P is power MOSFET using magnachip

’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Key Parameters

 Ordering Information

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

D

G

S

G

D

S