Electrical characteristics

STRH12P10ESY3

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Table 9.

1.

Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect

(SEE). Single event effect characterization is illustrated

Ion

Let (Mev/(mg/cm2))

Energy (MeV)

Range (µm)

Kr

34

316

43

100

Xe

55.9

459

43

80

Table 10.

Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

12

48

A

A

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

1.1

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

248

2.3

19

ns

µC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

300

3

22

ns

µC

A