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AM29SL800DB-100FC Datasheet(PDF) 40 Page - Advanced Micro Devices |
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AM29SL800DB-100FC Datasheet(HTML) 40 Page - Advanced Micro Devices |
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40 / 46 page ![]() ADV ANCE I N FO RMAT I O N March 17, 2003 Am29SL800D 39 ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 2.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 for further information on command definitions. 6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Includes all pins except VCC. Test conditions: VCC = 1.8 V, one pin at a time. TSOP PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.7 15 s Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 14 s Byte Programming Time 5 150 µs Excludes system level overhead (Note 5) Word Programming Time 7 210 µs Chip Programming Time (Note 3) Byte Mode 5.3 16 s Word Mode 3.7 11 s Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 11.0 V Input voltage with respect to VSS on all I/O pins –0.5 V VCC + 0.5 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Parameter Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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