IRGPC30F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

—

—

1.2

Case-to-Sink, flat, greased surface

—

0.24

—

°C/W

Junction-to-Ambient, typical socket mount

—

—

40

Wt

Weight

—

6 (0.21)

—

g (oz)

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

≤ 2.1V

E

C

G

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current

31

Continuous Collector Current

17

A

Pulsed Collector Current



120

Clamped Inductive Load Current

‚

120

Gate-to-Emitter Voltage

±20

V

Reverse Voltage Avalanche Energy

ƒ

10

mJ

Maximum Power Dissipation

100

W

Maximum Power Dissipation

42

Operating Junction and

-55 to +150

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Thermal Resistance

TO -24 7AC

PD - 9.1023