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EMIF08-2005QEJ Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF08-2005QEJ Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() EMIF08-2005QEJ 2/4 Symbol Parameter and test conditions Value Unit V PP ESD discharge EC61000-4-2 air discharge IEC61000-4-2 contact discharge ±15 ±8 kV T j Junction temperature 125 °C T stg Storage temperature range -55 + 150 °C T L Maximum lead temperature for soldering 260 °C ABSOLUTE RATINGS (Tamb = 25°C) Symbol Parameter V BR Breakdown voltage I RM Leakage current @ V RM V RM Stand-off voltage V CL Clamping voltage I PP Peak pulse current αT Voltage temperature coefficient V F Forward voltage drop ELECTRICAL CHARACTERISTICS (T amb =25°C) VBR IPP Slope = 1/Rd VRM VF IF I IRM V VCL Symbol Test conditions Min. Typ. Max. Unit V BR I R =1mA 6 8 10 V I RM V RM = 3V per line 500 µA Rd I PP = 10A, tp = 2.5µs (see note 1) 1 Ω R I/O 180 200 220 Ω C in Vbias = 0V F = 1MHz Vosc = 30mV 45 50 pF 100.0k 1.0M 10.0M 100.0M 1.0G -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 f/Hz EMIF08-2005QEJ Aplac 7.62 User: STMicroelectronics Nov 05 2002 Emif08: S21(dB) response Fig. 1: Filtering behavior. 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V (V) R CLine(pF) C(V) Fig. 2: Capacitance versus reverse applied voltage. |
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