TS4961T datasheet(8/49 Pages) STMICROELECTRONICS

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Electrical characteristics

TS4961T

8/49

Table 8.

Electrical characteristics at VCC = +3.6 V with GND = 0 V, Vicm = 1.8 V,

Tamb = 25° C (unless otherwise specified)

(1)

Symbol

Parameter

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load

22.8

ISTBY

Standby current (2)

No input signal, VSTBY = GND

1000

Voo

Output offset voltage

No input signal, RL = 8Ω

325

Pout

Output power, G=6dB

THD = 1% Max, f = 1kHz, RL = 4Ω

THD = 10% Max, f = 1kHz, RL = 4Ω

THD = 1% Max, f = 1kHz, RL = 8Ω

THD = 10% Max, f = 1kHz, RL = 8Ω

1.1

1.4

0.7

0.85

THD + N

Total harmonic distortion + noise

Pout = 450 mWRMS, G = 6dB, 20Hz < f < 20kHz

RL = 8Ω + 15µH, BW < 30kHz

Pout = 500mWRMS, G = 6dB, f = 1kHz

RL = 8Ω + 15µH, BW < 30kHz

0.1

Efficiency

Pout = 1 WRMS, RL = 4Ω +≥ 15µH

Pout = 0.65 WRMS, RL = 8Ω+≥ 15µH

PSRR

Power supply rejection ratio with inputs grounded (3)

f = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp

CMRR

Common mode rejection ratio

f = 217Hz, RL = 8Ω, G = 6dB, ΔVic = 200mVpp

Gain

Gain value (Rin in kΩ)V/V

RSTBY

Internal resistance from standby to GND

273

300

327

FPWM

Pulse width modulator base frequency

280

kHz

SNR

Signal to noise ratio (A-weighting)

Pout = 0.6W, RL = 8Ω

tWU

Wake-up time

tSTBY

Standby time

273k

-----------------

300k

-----------------

327k

-----------------

Obsolete

Product(s)

- Obsolete

Product(s)

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