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Jun. 2016. Rev. 2.0

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SW10N80D

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

800

V

I

D

Continuous drain current (@T

10*

A

Continuous drain current (@T

6.3*

A

I

DM

Drain current pulsed

(note 1)

40

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

250

mJ

E

AR

Repetitive avalanche energy

(note 1)

30

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

52.1

W

0.42

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

2.4

R

thja

Thermal resistance, Junction to ambient

49

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 10N80D

SW10N80D

TO-220F

TUBE

N-channel Enhanced mode TO-220F MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 55nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED, Charge, SMPS

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 10A

R

1

2

3

TO-220F

1

2

3