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SW078R08ET Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW078R08ET Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2016. Rev. 3.0 1/6 SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-263 TO-220 V DSS Drain to source voltage 80 V I D Continuous drain current (@T C=25 oC) 60* A Continuous drain current (@T C=100 oC) 38* A I DM Drain current pulsed (note 1) 240 A V GS Gate to source voltage ± 20 V E AS Single pulsed avalanche energy (note 2) 304 mJ E AR Repetitive avalanche energy (note 1) 32 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 134 144 W Derating factor above 25oC 1.1 1.2 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-263 TO-220 R thjc Thermal resistance, Junction to case 0.93 0.87 oC/W R thja Thermal resistance, Junction to ambient 53 oC/W *. Drain current is limited by junction temperature. BV DSS :80V I D :60A R DS(ON) : 7.8mΩ 1. Gate 2. Drain 3. Source TO-263 1 2 3 Order Codes Item Sales Type Marking Package Packaging 1 SW B 078R08ET SW078R08ET TO-263 TUBE 2 SW P 078R08ET SW078R08ET TO-220 TUBE 1 2 3 Features High ruggedness Low R DS(ON) (Typ 7.8mΩ)@VGS=10V Low Gate Charge (Typ 79nC) Improved dv/dt Capability 100% Avalanche Tested Application:Telecom, Computer,Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including Fast switching time, low on resistance, low gate charge and especially excellent Avalanche characteristics. TO-220 1 2 3 |
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