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Oct. 2016. Rev. 2.0

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SW125R08VS

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

80

V

I

D

Continuous drain current (@T

50*

A

Continuous drain current (@T

31.5*

A

I

DM

Drain current pulsed

(note 1)

200

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

81

mJ

E

AR

Repetitive avalanche energy

(note 1)

9

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

2.6

W

0.02

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

49

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW K 125R08VS

SW125R08VS

SOP-8

REEL

N-channel Enhanced mode SOP-8 MOSFET

Features

 High ruggedness

 Low R

(Typ 10m

Ω)@V

 Low Gate Charge (Typ 30nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Electronic Ballast, Motor Control,

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 50A

R

10m

Ω @V

SOP-8

Note: R

efined as the solder mounting surface of the drain pins. R

board design.

G(4)

D(5,6,7,8)

S(1,2,3)

D

D

D

D

G

S

S

S