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SW4N70D1

May. 2017. Rev. 5.0

1/6

N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251S

TO-251N

TO-251N-

S2

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

4*

A

Continuous drain current (@T

2.4*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

160

mJ

E

AR

Repetitive avalanche energy

(note 1)

20

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

164

W

1.3

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251S

TO-251N

TO-251N-

S2

R

thjc

Thermal resistance, Junction to case

0.76

R

thja

Thermal resistance, Junction to ambient

90

*. Drain current is limited by junction temperature.

BV

I

D

: 4A

R

1. Gate 2. Drain 3. Source

TO-251S

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW SI 4N70D1

SW4N70D1

TO-251S

TUBE

2

SW N 4N70D1

SW4N70D1

TO-251N

TUBE

3

SW NC 4N70D1

SW4N70D1

TO-251N-S2

TUBE

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 18nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Adapter,LED,Charger

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-251N

1

2

3

TO-251N-S2

1

2

3