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Nov. 2016. Rev. 2.0

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SW20N03A

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

30

V

I

D

Continuous drain current (@T

5.7*

A

Continuous drain current (@T

3.6*

A

I

DM

Drain current pulsed

(note 1)

23

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

41

mJ

E

AR

Repetitive avalanche energy

(note 1)

3

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

1.5

W

0.01

T

Operating junction temperature & storage temperature

-55 ~ + 150

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

86

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW H 20N03A

SW20N03A

DFN3*3

REEL

N-channel Enhanced mode DFN3*3 MOSFET

Features

 High ruggedness

 Low R

(Typ 23m

Ω)@V

 Low Gate Charge (Typ 14nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC Converter，Inverter，

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 5.7A

R

23m

Ω@V

G(4)

D(5,6,7,8)

S(1,2,3)

DFN3*3

Note: R

efined as the solder mounting surface of the drain pins. R

board design.