SW70N10V datasheet(1/7 Pages) SEMIPOWER

Part #	SW70N10V

Description	N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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1 / 7 page

Nov. 2016. Rev. 2.0

1/7

SW70N10V

N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220

V

DSS

Drain to source voltage

95

V

I

D

Continuous drain current (@T

C=25

oC)

70*

A

Continuous drain current (@T

C=100

oC)

44*

A

I

DM

Drain current pulsed

(note 1)

280

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

351

mJ

E

AR

Repetitive avalanche energy

(note 1)

24

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

69.4

125

179

W

Derating factor above 25oC

0.55

1.00

1.4

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220

R

thjc

Thermal resistance, Junction to case

1.8

1.0

0.7

oC/W

R

thja

Thermal resistance, Junction to ambient

92

56

oC/W

*. Drain current is limited by junction temperature.

BV

DSS : 95V

I

D

: 70A

R

DS(ON) : 11.7mΩ @VGS=10V

12.4m

Ω @V

GS=4.5V

1. Gate 2. Drain 3. Source

TO-251

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 70N10V

SW70N10V

TO-251

TUBE

2

SW D 70N10V

SW70N10V

TO-252

REEL

3

SW P 70N10V

SW70N10V

TO-220

TUBE

1

2

3

Features

 High ruggedness

 Low R

DS(ON) (Typ 11.7mΩ)@VGS=10V

Low R

DS(ON) (Typ 12.4mΩ)@VGS=4.5V

 Low Gate Charge (Typ 117nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including

Fast switching time, low on resistance, low gate charge and especially excellent

Avalanche characteristics.

1

2

3

TO-252

TO-220

1

2

3

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SW70N10V Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

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