Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

July. 2014. Rev.3.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 17nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 TO-251 TO-252 TO-220F

V

DSS

Drain to Source Voltage

500

V

I

D

Continuous Drain Current (@T

5*

A

Continuous Drain Current (@T

3.2*

A

I

DM

Drain current pulsed

(note 1)

20

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

320

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

30

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

123.6

101.9

113.4

18.7

W

1.0

0.8

0.9

0.15

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220 TO-251 TO-252 TO-220F

R

thjc

Thermal resistance, Junction to case

1.01

1.23

1.10

6.7

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

56.7

75.9

47

1/6

*. Drain current is limited by junction temperature.

BV

I

D

: 5A

R

SW830D1

SAMWIN

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 830

SW830D1

TO-220

TUBE

2

SW I 830

SW830D1

TO-251

TUBE

3

SW D 830

SW830D1

TO-252

REEL

4

SW F 830

SW830D1

TO-220F

TUBE

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

1. Gate 2. Drain 3. Source

1

2

3

TO-220

TO-251

TO-252

1

1

2

2

3

3

TO-220F

1

2

3