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R5F100GC Datasheet(PDF) 123 Page - Renesas Technology Corp

Part # R5F100GC
Description  True Low Power Platform
PDF  202 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F100GC Datasheet(HTML) 123 Page - Renesas Technology Corp

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RL78/G13
2. ELECTRICAL SPECIFICATIONS (TA = -40 to +85
C)
Page 123 of 196
R01DS0131EJ0330 Rev.3.30
Mar 31, 2016
2.10 Timing of Entry to Flash Memory Programming Modes
(TA =
40 to +85C, 1.8 V  EVDD0 = EVDD1  VDD  5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Time to complete the
communication for the initial
setting after the external reset is
released
tSUINIT
POR and LVD reset must be released before
the external reset is released.
100
ms
Time to release the external reset
after the TOOL0 pin is set to the
low level
tSU
POR and LVD reset must be released before
the external reset is released.
10
s
Time to hold the TOOL0 pin at
the low level after the external
reset is released
(excluding the processing time of
the firmware to control the flash
memory)
tHD
POR and LVD reset must be released before
the external reset is released.
1
ms
RESET
TOOL0
<1>
<2>
<3>
tSUINIT
723
μs + tHD
processing
time
tSU
<4>
1-byte data for setting mode
<1> The low level is input to the TOOL0 pin.
<2> The external reset is released (POR and LVD reset must be released before the
external reset is released.).
<3> The TOOL0 pin is set to the high level.
<4> Setting of the flash memory programming mode by UART reception and complete
the baud rate setting.
Remark
tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is
released during this period.
tSU:
Time to release the external reset after the TOOL0 pin is set to the low level
tHD:
Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the
processing time of the firmware to control the flash memory)



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