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IRL3402 Datasheet(PDF) 1 Page - International Rectifier |
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IRL3402 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  10/31/97 IRL3402 PRELIMINARY HEXFET® Power MOSFET PD - 9.1697 S D G VDSS = 20V RDS(on) = 0.01Ω ID = 85A l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 85 ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 54 A IDM Pulsed Drain Current 340 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.91 W/°C VGS Gate-to-Source Voltage ± 10 V VGSM Gate-to-Source Voltage 14 V (Start Up Transient, tp = 100µs) EAS Single Pulse Avalanche Energy 290 mJ IAR Avalanche Current 51 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.1 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance TO-220AB Description |
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