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NFQ60 Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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NFQ60 Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor Ltd. NFQ60 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Single Phase Full Controlled Bridge Rectifier, 60 Amps Features • Easy connections, screw type terminals • Good surge current capability • Low forward voltage drop • Easy mounting Voltage Ratings (TJ = 25oC unless otherwise noted) Type number Voltage code VRRM, Max. repetitive peak reverse voltage (V) VRSM, Max. non- repetitive peak reverse voltage (V) IRRM max @ TVJM (mA) NFQ60 80 800 900 5.0 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 Electrical Specifications (TJ = 25oC unless otherwise noted) Parameters Conditions Symbol Values Units Maximum on-state average current TC = 85oC IdAVM 60 A Forward surge current (non-repetitive), one cycle f = 50Hz, TVJ = TVJM, VR = 0 IFSM, ITSM 600 A Maximum forward voltage drop IT = 55A, TVJ = 25 oC VTM 1.4 V Current required for fusing f = 50Hz, TVJ = TVJM, VR = 0 I2t 1800 A2s Maximum rate of rise of on-state current TVJ = TVJM, f = 50Hz, IT = ITAVM di/dt 500 A/µs Critical rate of rise of off-state voltage TVJ = TVJM, VDR = 2/3 VDRM dv/dt 1000 V/µs Gate voltage to trigger VD = 6V, TVJ = 25 oC VGT 1.0 V Gate current to trigger VD = 6V, TVJ = 25 oC IGT 100 mA Holding current TVJ = 25 oC, VD = 6V IH 150 mA Latching current TVJ = 25 oC IL 200 mA RMS isolation voltage f = 50Hz, t = 1s VISO 3000 V Thermal and Mechanical Specifications (TJ = 25oC unless otherwise noted) Parameters Symbol Values Units Operating junction temperature range TVJ - 40 to + 125 oC Maximum junction temperature TVJM 125 oC Maximum storage temperature range TSTG - 40 to + 125 oC Maximum thermal resistance, junction to case Rth(J-C) 0.20 oC/W Mounting torque ±10% to heatsink F 3.5 Nm to terminal 3.5 Approximate weight W 170 g |
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