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NFS60 Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

Part # NFS60
Description  Three Phase Full Controlled Bridge Rectifier, 60 Amps
PDF  2 Pages
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Manufacturer  NAINA [Naina Semiconductor ltd.]
Direct Link  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

NFS60 Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

  NFS60 Datasheet HTML 1Page - Naina Semiconductor ltd. NFS60 Datasheet HTML 2Page - Naina Semiconductor ltd.  
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Naina Semiconductor Ltd.
NFS60
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
Three Phase Full Controlled Bridge Rectifier, 60 Amps
Features
•
Easy connections, screw type terminals
•
Good surge current capability
•
Low forward voltage drop
•
Improved temperature & power dissipation
•
Easy mounting
Voltage Ratings (TJ = 25oC unless otherwise noted)
Type
number
Voltage
code
VRRM, Max.
repetitive peak
reverse voltage
(V)
VRSM, Max. non-
repetitive peak
reverse voltage
(V)
IRRM max
@ TJ max
(mA)
NFS60
80
800
900
10
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
Electrical Specifications (TJ = 25oC unless otherwise noted)
Parameters
Conditions
Symbol
Values
Units
Maximum on-state average current
TC = 85oC
ID
60
A
Forward surge current (non-repetitive), one cycle
f = 50Hz, TVJ = 25 oC
IFSM, ITSM
470
A
Maximum forward voltage drop
IT = 200A, TVJ = 25oC
VT
max. 1.75
V
Current required for fusing
f = 50Hz, TVJ = 25 oC
I2t
1100
A2s
Maximum rate of rise of on-state current
TVJ = TVJM, f = 50Hz
di/dt
max. 50
A/µs
Critical rate of rise of off-state voltage
TVJ = TVJM
dv/dt
max. 500
V/µs
Gate voltage to trigger
TVJ = 25oC
VGT
min. 3
V
Gate current to trigger
TVJ = 25oC
IGT
min. 150
mA
Holding current
TVJ = 25 oC
IH
100
mA
Latching current
TVJ = 25 oC
IL
250
mA
RMS isolation voltage
f = 50Hz, t = 1 min
VISO
3000
V
Thermal and Mechanical Specifications (TJ = 25oC unless otherwise noted)
Parameters
Symbol
Values
Units
Operating junction temperature range
TVJ
- 40 to + 125
oC
Maximum storage temperature range
TSTG
- 40 to + 125
oC
Maximum thermal resistance, junction to case
Rth(J-C)
1.0
oC/W
Mounting torque ±10%
to heatsink
F
5
Nm
to terminal
4
Approximate weight
W
320
g


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