FMM23N20 datasheet(2/3 Pages) FCI

2 / 3 page

FMM23N20 2.3A 20V N-Channel Enhancement-Mode MOSFET

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = -10uA

Drain-Source On-State Resistance

RDS(on)

VGS = 4.5V, ID = 2.8A

Drain-Source On-State Resistance

RDS(on)

VGS = 2.5V, ID = 2.0A

115

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID = 250uA

0.65

0.95

1.20

Zero Gate Voltage Drain Current

IDSS

VDS = 9.6V, VGS = 0V

-1

Gate Body Leakage

IGSS

VGS = ±8V, VDS = 0V

±100

Gate Resistance

Forward Transconductance

gfs

VDS = 5V, ID = 4.0A

6.5

Dynamic

Total Gate Charge

3.69

Gate-Source Charge

Qgs

0.70

Gate-Drain Charge

Qgd

1.06

Turn-On Delay Time

td(on)

6.16

Turn-On Rise Time

7.56

Turn-Off Delay Time

td(off)

16.61

Turn-Off Fall Time

4.07

Input Capacitance

Ciss

427.12

Output Capacitance

Coss

80.56

Reverse Transfer Capacitance

Crss

57.00

Source-Drain Diode

Max. Diode Forward Current

Diode Forward Voltage

VSD

IS = -1.6A, VGS = 0V

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

Feb '06 Rev 1

N-Channel Enhancement-Mode MOSFET

VDS = 6V, VGS = 0V

f = 1.0 MHz

VDD = 6V, RL = 6Ω

D = 1Α, VGEN = 4.5V

RG = 6Ω

VDS = 6V, ID = 2.8A

VGS = 4.5V

FMM23N20 Datasheet(PDF) 2 Page - First Components International

FMM23N20 Datasheet(HTML) 2 Page - First Components International

Html Pages

1 2 3

Datasheet Download

Link URL