FMP05P30 datasheet(1/2 Pages) FCI

Part #	FMP05P30

Description	5.3A 30V P-Channel Enhancement-Mode MOSFET

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	FCI [First Components International]

Direct Link	http://www.cotra.com.tw/

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1 / 2 page

VDS= -30V

RDS(ON), Vgs@-10V, Ids@-5.3A = 59.4mΩ

RDS(ON), Vgs@-4.5V, Ids@-4.2A = 88mΩ

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

Improved Shoot-Through FOM

Maximum Ratings and Thermal Characteristics (T

A = 25

oC unless otherwise noted)

Symbol

Limit

Unit

VDS

-30

VGS

+ 20

ID

-5.3

IDM

-20

TA = 25

oC

2.5

TA = 75

oC

TJ, Tstg

-55 to 150

oC

EAS

mJ

RθJC

30

Junction-to-Ambient Thermal Resistance (PCB mounted)

RθJA

50

Note: 1. Maximum DC current limited by the package

2. 1-in

2oz Cu PCB board

August '05 Rev 2

1

Avalanche Energy with Single Pulse

ID=50A, VDD=25V, L=0.5mH

Operating Junction and Storage Temperature Range

Continuous Drain Current

Gate-Source Voltage

Maximum Power Dissipation

P-Channel MOSFET

oC/W

Junction-to-Case Thermal Resistance

Parameter

V

A

W

Drain-Source Voltage

PD

Pulsed Drain Current

Top View

Internal Schematic Diagram

TSOP-6

Gate

Drain

Source

1)

2)

2

FMP05P30 5.3A 30V P-Channel Enhancement-Mode MOSFET

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FMP05P30 Datasheet(PDF) 1 Page - First Components International

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