BC807 datasheet(1/2 Pages) FCI

Part #	BC807

Description	Silicon Epitaxial Plannar Transistors

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Manufacturer	FCI [First Components International]

Direct Link	http://www.cotra.com.tw/

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1.3

2.4

BC807-16LT1

BC807-25LT1

BC807-40LT1

FEATURES

·Ldeally suited for automatic insertion

·epitaxial planar die construction

·complementary NPN type available(BC817)

MARKING: 16LT1:5A1;

25LT1:5B;

40LT1:5C

MAXIMUM RATINGS* TA=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.5

A

PC

Collector Dissipation

0.3

W

TJ, Tstg

Junction and Storage Temperature

-55-150

℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

VCBO

Ic= -10 μA，

IE=0

-50

V

Collector-emitter breakdown voltage

VCEO

Ic= -10

mA， IB=0

-45

V

Emitter-base breakdown voltage

VEBO

IE= -1 μA，

IC=0

-5

V

Collector cut-off current

ICBO

VCB= -45 V ,

IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE= -40 V ,

IB=0

-0.2

μA

Emitter cut-off current

IEBO

VEB= -4 V ,

IC=0

-0.1

μA

DC current gain

807-16

807-25

807-40

hFE（1）

VCE= -1V,

IC= -100mA

100

160

250

400

600

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50 mA

-0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= -500 mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE= -5 V,

IC= -10mA

f=100MHz

100

MHz

Unit : mm

SOT—23

1. BASE

2. EMITTER

3. COLLECTOR

PNP Silicon Epitaxial Plannar Transistors

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