FMMT458 datasheet(1/1 Pages) FCI

Part #	FMMT458

Description	NPN Epitaxial Planar Transistor

PDF	1 Pages

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Manufacturer	FCI [First Components International]

Direct Link	http://www.cotra.com.tw/

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V

CEO

400

V

CBO

400

V

EBO

5.0

V

I

C

225

mA

Total Device Dissipation

T

A = 25

o

C

Junction and Storage Temperature

Description

Data Sheet

NPN Epitaxial Planar Transistor

Ratings

Maximum Ratings

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current

Symbol

Value

Units

P

D

500

mW

T

J, TSTG

-55 to 150

o

C

Mechanical Dimensions

Electrical Characteristics @ 25oC

Characteristic

Symbol

Min

Max

Unit

Collector - Emitter Breakdown Voltage

(I

C = 10mA)

Collector - Base Breakdown Voltage

(I

C = 100µA)

Emitter - Base Breakdown Voltage

(I

E = 100µA)

Collector Cutoff Current

(V

CB = 320V, IE = 0)

Emitter Cutoff Current

(V

EB = 4.0V, IC = 0)

Static Forward Current Transfer Ratio

(I

C = 1.0 mA, VCE = 10 V)

(I

C = 50 mA, VCE = 10 V)

(I

C = 100 mA, VCE = 10 V)

Collector - Emitter Saturation Voltage

(I

C = 50 mA, IB = 6.0 mA)

Base - Emitter Saturation Voltage

(I

C = 50 mA, IB = 5.0 mA)

Current - Gain - Bandwidth Product

(I

C = 10 mA, VCE = 20 V, f = 100 MHz)

Output Capacitance

(V

CB = 20 V, f = 1.0 MHz)

Switching Characteristics

(I

C = 50 mA, VCC = 100 V)

(I

B1 = 5.0 mA, IB2 = 10 mA)

V

BR(CEO)

400

---

V

BR(CBO)

400

---

V

BR(EBO)

5.0

---

V

I

CBO

---

0.1

µA

I

EBO

---

0.1

µA

h

FE

100

300

15

V

CE(sat)

---

0.5

V

BE(sat)

---

0.9

V

f

T

50

---

MHz

C

ob

---

5.0

pF

T

on

35 (TYP)

ns

T

off

2260 (TYP)

ns

.110

.060

.037

.115

.016

.043

.004

.016

1

2

3

1

2

3

2

3

1

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