| Electronic Components Datasheet Search |
|
RT9624F Datasheet(PDF) 3 Page - Richtek Technology Corporation |
|
|
|||||||||||||||||||||||||||||
RT9624F Datasheet(HTML) 3 Page - Richtek Technology Corporation |
|
3 / 13 page ![]() RT9624F 3 DS9624F-02 July 2015 www.richtek.com © Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. Operation POR (Power On Reset) The POR block detects the voltage the VCC pin. When the VCC pin voltage is higher than POR rising threshold, the POR block output is high. The POR output is low when VCC is not less than POR rising threshold. When the POR block output is high, UGATE and LGATE can be controlled by PWM input voltage. If the POR block output is low, both UGATE and LGATE will be pulled to low. Tri-State Detect When both POR block output and EN pin voltages are high, UGATE and LGATE can be controlled by PWM input. There are three PWM input modes, which are high, low, and shutdown state. If PWM input is within the shutdown window, both UGATE and LGATE output are low. When PWM input is higher than its rising threshold, UGATE is high and LGATE is low. When PWM input is lower than its falling threshold, UGATE is low and LGATE is high. Bootstrap Control The Bootstrap control block controls the integrated bootstrap switch. When LGATE is high (low-side MOSFET is turned on), the bootstrap switch is turned on to charge the bootstrap capacitor connected to BOOT pin. When LGATE is low (low-side MOSFET is turned off), the bootstrap switch is turned off to disconnect VCC pin and BOOT pin. Turn-Off Detection The turn-off detection block detects whether high-side MOSFET is turned off by monitoring the PHASE pin voltage. To avoid shoot through between high-side and low-side MOSFETs, low-side MOSFET can be turned on only after high-side MOSFET is effectively turned off. Shoot-Through Protection The shoot-through protection block implements the dead time when both high-side and low-side MOSFETs are turned off. With shoot-through protection block, high-side and low-side MOSFET are never turned on simultaneously. Thus, shoot through between high-side and low-side MOSFETs is prevented. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |