© Semiconductor Components Industries, LLC, 2004

October, 2004 − Rev. 4

1

Publication Order Number:

NTHD4P02F/D

NTHD4P02F

Power MOSFET and

Schottky Diode

−20 V, −3.0 A, Single P−Channel with

3.0 A Schottky Barrier Diode, ChipFET

t

Features

Characteristics

Applications

Parameter

Symbol

Value

Units

Drain−to−Source Voltage

−20

V

Gate−to−Source Voltage

±12

V

Continuous Drain

Current

Steady

−2.2

A

Current

Steady

State

−1.6

t

v 5 s

−3.0

A

Pulsed Drain

Current

−9.0

A

Power Dissipation

Steady

1.1

W

Steady

State

0.6

t

v 5 s

2.1

Continuous Source Current (Body Diode)

−2.1

A

Operating Junction and Storage

Temperature

−55 to 150

°C

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

260

°C

SCHOTTKY DIODE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

20

V

DC Blocking Voltage

20

V

Average Rectified

Forward Current

Steady

State

2.2

A

t

v 5 s

3.0

A

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

C2 = Specific Device Code

M = Month Code

Device

Package

ORDERING INFORMATION

NTHD4P02FT1

ChipFET

3000/Tape & Reel

ChipFET

CASE 1206A

STYLE 3

PIN

CONNECTIONS

MARKING

DIAGRAM

1

2

3

4

8

7

6

5

http://onsemi.com

G

D

P−Channel MOSFET

S

C

A

SCHOTTKY DIODE

8

7

6

5

4

3

2

1

C

C

D

D

A

A

S

G

NTHD4P02FT1G

ChipFET

(Pb−free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

−20 V

20 V

200 m

W @ −2.5 V

−130 m

W @ −4.5 V

0.510 V

−3.0 A

3.0 A

MOSFET

SCHOTTKY DIODE