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2SD602 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # 2SD602
Description  Silicon NPN transistor in a SOT-23 Plastic Package
PDF  6 Pages
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SD602 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SD602(A)
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
2SD602
2SD602A
VCBO
30
60
V
Collector to Emitter Voltage
2SD602
2SD602A
VCEO
25
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current
IC
500
mA
Collector Current(pulse)
ICP
1.0
A
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector Cut-Off Current
ICBO
VCB=20V
IE=0
0.1
μA
Collector-Base Breakdown
Voltage
VCBO
2SD602
2SD602A
IC=10μA
IE=0
30
60
V
Collector-Emitter
Breakdown Voltage
VCEO
2SD602
2SD602A
IC=10mA
IB=0
25
50
V
Emitter-Base Breakdown
Voltage
VEBO
IE=10μA
IC=0
5
V
hFE(1)
VCE=10V
IC=150mA
85
160
340
DC Current Gain
hFE(2)
VCE=10V
IC=500mA
40
Collector to Emitter
Saturation Voltage
VCE(sat)
IC=300mA
IB=30mA
0.35
0.6
V
Transition Frequency
fT
VCB=10V
IE=-50mA
f=200MHz
200
MHz
Collector Output
Capacitance
Cob
VCB=10V
IE=0
f=1MHz
6.0
15
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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