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MMBT2222AW Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # MMBT2222AW
Description  Silicon NPN transistor in a SOT-323 Plastic Package
PDF  6 Pages
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

MMBT2222AW Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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MMBT2222AW
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
75
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
600
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55~150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=10μA
IE=0
75
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=10mA
IB=0
40
V
Emitter to Base Breakdown Voltage
VEBO
IE=10μA
IC=0
6.0
V
Collector Cut-Off Current
ICBO
VCB=60V
IE=0
0.01
μA
Emitter Base Cut-Off Current
IEBO
VEB=5.0V
IC=0
0.1
μA
DC Current Gain
hFE
VCE=10V
IC=150mA
100
300
Collector to Emitter Saturation
Voltage
VCE(sat) (1) IC=150mA
IB=15mA
0.3
V
VCE(sat) (2) IC=500mA
IB=50mA
1.0
V
Base to Emitter Saturation Voltage
VBE(sat) (1) IC=150mA
IB=15mA
0.6
1.2
V
VBE(sat) (2) IC=500mA
IB=50mA
2.0
V
Collector output capacitance
Cob
VCB=10V
IE=0
f=1.0MHz
8.0
pF
Transition Frequency
fT
IC=20mA
VCE=20V
f=100MHz
300
MHz
Turn-On Time
ton
VCC=30V
VBE=-0.5V
IC=150mA
IB1=15mA
35
ns
Turn-Off Time
toff
VCC=30V
IC=150mA
IB1=IB2=15mA
285
ns
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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