MMBT5089 datasheet(2/6 Pages) FOSHAN

2 / 6 page

MMBT5089

RevF Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

4.5

Collector Current

100

Collector Power Dissipation

350

Junction Temperature

-55～150

℃

Storage Temperature Range

Tstg

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=100μA

IE=0

Collector to Emitter Breakdown

Voltage

VCEO

IC=1.0mA

IB=0

Collector Cut-Off Current

ICBO

VCB=15V

IE=0

Emitter Cut-Off Current

IEBO

VEB=4.5V

IC=0

100

DC Current Gain

hFE(1)

VCE=5.0V

IC=100μA

400

1200

hFE(2)

VCE=5.0V

IC=1.0mA

450

hFE(3)

VCE=5.0V

IC=10mA

400

Collector-Emitter Saturation

Voltage

VCE(sat)

IC=10mA

IB=1.0mA

0.5

Base-Emitter Saturation Voltage

VBE(sat)

IC=10mA

IB=5.0mA

0.8

Collector-Base Capacitance

Ccb

VCB=5.0V

IE=0

f=100kHz

4.0

Emitter-Base Capacitance

Ceb

Veb=0.5V

IE=0

f=100kHz

Transition Frequency

IC=500μA

VCE=5.0V

f=20MHz

MHz

Small-Signal Current Gain

hfe

IC=1.0mA

VCE=5.0V

f=1.0MHz

450

1800

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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