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IPS0551T Datasheet(PDF) 1 Page - International Rectifier |
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IPS0551T Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page ![]() Features • Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.S.D protection IPS0551T FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No. PD60160-A Package Product Summary Typical Connection Description The IPS0551T is a fully protected three terminal SMART POWER MOSFET that features over-current, over-tem- perature, ESD protection, and drain to source active clamp. This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protec- tion by turning OFF the power MOSFET when temperature exceeds 165oC or when the drain current reaches 100A. The device restarts once the input is cycled. The ava- lanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetiza- tions. Rds(on) 5.2m Ω (max) V clamp 40V Ishutdown 100A Ton/Toff 4 µs SUPER SMD220 Advance Information SUPER TO220 L o a d R in s e r ie s ( if n eed ed ) L ogic s ig n a l IN D co n t r o l S www.irf.com 1 |
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