IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFH 6N100F

IXFT 6N100F

Q

0

10

20304050

0

2

4

6

8

10

I

V

V

0

5

10

15

20

25

30

35

40

40

50

70

200

300

400

500

700

2000

100

1000

Crss

Coss

Ciss

f = 1MHz

Pulse Width - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

D = Duty Cycle

D=0.2

D=0.5

D=0.1

D=0.05

D=0.02

D=0.01

Single pulse

T

T

V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

2

4

6

8

10

12

14

16

18

T

T

I

Fig. 7. Gate Charge Characteristic Curve

Fig. 8. Capacitance Curves

Fig. 9. Source Current vs. Source to Drain Voltage

Fig. 10. Thermal Impedance