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STN488DN Datasheet(PDF) 3 Page - Stanson Technology

Part # STN488DN
Description  N Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STN488DN Datasheet(HTML) 3 Page - Stanson Technology

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STN488DN
N Channel Enhancement Mode MOSFET
100A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN488DN 2016 V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=250uA
40
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=250uA
1.0
2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=40V,VGS=0V
1
uA
VDS=32V,VGS=0V
TJ=125℃
10
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=25A
VGS=4.5V,ID=12A
2.2
2.6
2.8
3.5
mΩ
Forward
Transconductance
gfs
VDS=10V,ID=2A
16
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
1.0
V
Dynamic
Total Gate Charge
Qg
VDS=20V,VGS=4.5V
ID≡10A
44.4
80
nC
Gate-Source Charge
Qgs
9.6
18
Gate-Drain Charge
Qgd
16
30
Input Capacitance
Ciss
VDS =25V,VGS=0V
F=1MHz
4940 7800
pF
Output Capacitance
Coss
420
800
Reverse
TransferCapacitance
Crss
170
330
Turn-On Time
td(on)
tr
VDS=20V,ID=1A
VGS=10V, RG=6Ω
28
50
nS
3.2
6.5
Turn-Off Time
td(off)
tf
105
150
40
28



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