TC55NEM208AFPN datasheet(2/10 Pages) TOSHIBA

Part #	TC55NEM208AFPN

Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 10 page

TC55NEM208AFPN/AFTN55,70

2002-09-18

2/10

BLOCK DIAGRAM

OPERATING MODE

MODE

R/W

I/O1~I/O8

POWER

Read

Output

IDDO

Write

Input

IDDO

Output Deselect

High-Z

IDDO

Standby

High-Z

IDDS

* = don't care

H = logic high

L = logic low

MAXIMUM RATINGS

SYMBOL

RATING

VALUE

UNIT

VDD

Power Supply Voltage

−0.3~7.0

VIN

Input Voltage

−0.3*~7.0

VI/O

Input/Output Voltage

−0.5~VDD + 0.5

Power Dissipation

0.6

Tsolder

Soldering Temperature (10s)

260

°C

Tstg

Storage Temperature

−55~150

°C

Topr

Operating Temperature

−40~85

°C

−2.0 V when measured at a pulse width of 20ns

COLUMN ADDRESS

BUFFER

I/O1

MEMORY CELL ARRAY

2,048

× 256 × 8

(4,194,304)

COLUMN ADDRESS

DECODER

COLUMN ADDERSS

SENSE AMP

A14

A11

A15

A16

VDD

GND

R/W

A18

A0 A1

A17

A3 A10 A12 A13

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

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