PART NUMBER

UPC2776T

PACKAGE OUTLINE

TO6

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Circuit Current (no signal)

mA

18

25

33

Gs

Small Signal Gain, f = 1 GHz

dB

21

23

26

Upper Limit Operating Frequency

GHz

2.3

2.7

Gain Flatness, f = 0.1 ~ 2.0 GHz

dB

±1.0

Output Power at 1 dB Compression f = 1 GHz

dBm

+4

+6.0

NF

Noise Figure, f = 1 GHz

dB

6.0

7.5

Input Return Loss, f = 1 GHz

dB

4.5

7.5

Output return Loss, f = 1 GHz

dB

15

20

ISOL

Isolation, f = 1 GHz

dB

27

32

Saturated Output Power, f = 1 GHz

dBm

8.5

3rd Order Intermodulation Distortion, f = 1 GHz

dBc

-30

Thermal Resistance (Junction to Ambient)

°C/W

200

2.7 GHz SILICON MIMIC

WIDE BAND AMPLIFIER

The UPC2776T is a Silicon Monolithic integrated circuit

manufactured using the NESAT III process. This device is

suitable for wide band IF blocks due to its high gain and flat

response. The UPC2776T is designed as a low cost IC gain

stage in DBS, TVRO, PCS, WLAN and other communication

receivers.

DESCRIPTION AND APPLICATIONS

FEATURES

•

WIDE FREQUENCY RESPONSE: 2.7 GHz

•

FLAT GAIN RESPONSE:

±1.0 dB

•

HIGH GAIN: 23 dB

•

•

5 V SINGLE SUPPLY VOLTAGE

•

SMALL SURFACE MOUNT PACKAGE : T06

•

TAPE AND REEL PACKAGING AVAILABLE

California Eastern Laboratories

PRELIMINARY DATA SHEET

GAIN vs. FREQUENCY

Frequency, f (GHz)

30

25

20

15

10

0

0.5

1.0

1.5

2.0

2.5

3.0

UPC2776T