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AWG1017E Datasheet(PDF) 2 Page - Advanced Semiconductor Business Inc. |
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AWG1017E Datasheet(HTML) 2 Page - Advanced Semiconductor Business Inc. |
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2 / 13 page ![]() 2/13 ASB Inc. sales@asb.co.kr January 2017 AWG1017E 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 2000 2500 2700 MHz Gain 17.6 17.5 17.4 17.3 17.1 16.4 16.2 16.2 dB S11 -17.0 -20.0 -20.0 -20.0 -20.0 -18.0 -17.0 -17.0 dB S22 -18.0 -18.0 -18.0 -18.0 -17.0 -18.0 -18.0 -20.0 dB Noise Figure 2.1 2.1 2.1 2.1 2.0 2.5 3.0 3.3 dB Output IP31) 33.5 33.5 34.5 35.0 34.5 33.0 28.0 25.0 dBm Output P1dB 18.0 18.0 18.0 18.0 17.5 17.5 17.0 16.0 dBm Current 65 Device Voltage +3.3 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Min Typ Max Unit Frequency 2000 MHz Gain 16.4 dB S11 -18.0 dB S22 -18.0 dB Noise Figure 2.5 dB OIP3 33.0 dBm P1dB 17.5 dBm Current 65 mA Device Voltage +3.3 V 2.3 Pin Configuration Pin Description Simplified Outline 1, 2, 4, 5 Ground 1 2 3 4 5 6 3 RF_INPUT 6 RF_OUT & Bias |
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