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2SD2396 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD2396 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente 2SD2396 3A, 80V P Plastic-Encapsulated Transistor 24-Aug-2016 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Darling connection provides high DC current gain (hFE) Large collector power dissipation Low frequency and power amplifier ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 6 V Collector Current IC 3 A Collector Power Dissipation PC 2 W Thermal Resistance from Junction to Ambient RθJA 62.5 °C/ W Junction and Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 80 - - V IC=0.05mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 60 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=0.05mA, IC=0 Collector Cut-Off Current ICBO - - 100 µA VCB=80V, IE=0 Emitter Cut-Off Current IEBO - - 100 µA VEB=6V, IC=0 DC Current Gain 1 hFE 600 - 1200 VCE=4V, IC=0.5A Collector to Emitter Saturation Voltage 1 VCE(sat) - - 0.8 V IC=2A, IB=50mA Base to Emitter Voltage VBE(sat) - - 1.5 V IC=2A, IB=50mA Transition Frequency fT - 40 - MHz VCE=5V, IC=0.2A, f=10MHz Collector Output Capacitance Cob - 55 - pF VCB=10V, IE=0, f=1MHz Notes: 1. Pulse test:Pulse width≦300µs, duty cycle≦2%. ITO-220J Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 14.5 15.5 H 3.8 TYP. B 9.5 10.5 J 1.30 REF. C 13.20 REF. K 0.3 0.9 D 4.24 4.84 L 2.54 REF. E 2.52 3.20 M 2.70 REF. F 2.50 2.90 N φ 3.5 REF. G 0.47 0.75 |
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