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AM7152N Datasheet(PDF) 1 Page - Analog Power |
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AM7152N Datasheet(HTML) 1 Page - Analog Power |
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1 / 5 page ![]() Analog Power AM7152N N-Channel 150-V (D-S) MOSFET VDS (V) ID (A) 3.9 3.7 Symbol Limit Units VDS 150 VGS ±20 TA=25°C 3.9 TA=70°C 3 IDM 15 IS 4.6 A TA=25°C 3.5 TA=70°C 2 TJ, Tstg -55 to 150 °C Symbol Maximum Units 35 81 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Gate-Source Voltage PRODUCT SUMMARY 150 rDS(on) (mΩ) 156 @ VGS = 10V 176 @ VGS = 5.5V Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE PSE and PD Circuits • LED Inverter Circuits • 48V-Input DC/DC Conversion Circuits DFN3x3-8L © Preliminary 1 Publication Order Number: DS_AM7152N_1A |
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