SMS2321 datasheet(2/3 Pages) SECOS

2 / 3 page

SMS2321

-2.9A, -20V, RDS(ON) 57 m

Ω

P-Channel Enhancement MOSFET

Elektronische Bauelemente

26-May-2016 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID= -10

µA

Zero Gate Voltage Drain Current

IDSS

-1

µA V

DS= -16V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VGS=±12V, VDS=0

Gate-Source Threshold Voltage

VGS(th)

-0.4

-0.9

VDS=VGS, ID= -250

µA

Static Drain-Source On Resistance

RDS(ON)

VGS= -4.5V, ID= -3.3A

VGS= -2.5V, ID= -2.8A

110

VGS= -1.8V, ID= -2.3A

Forward Transconductance

gFS

VDS= -5V, ID= -3.3A

Forward Voltage

VSD

-1.2

IS= -1.6A, VGS=0

Dynamic Characteristics

Input Capacitance

Ciss

715

VDS= -6V

VGS=0

f=1MHz

Output Capacitance

Coss

170

Reverse Transfer Capacitance

Crss

120

Total Gate Charge

VDS= -6V

VGS= -4.5V

ID= -3.3A

Gate-Source Charge

Qgs

1.2

Gate-Drain (“Miller”) Charge

Qgd

2.2

Switching Characteristics

Turn-On Delay Time

Td(on)

VGEN= -4.5V

VDD= -6V

RG=6

RL=6

ID= -1A

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

Notes:

Pulse Test: Pulse width≦300

µs, duty cycle≦2%.

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