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SMS8820 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SMS8820
Description  N-Ch Enhancement Mode Power MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMS8820 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SMS8820
7A , 20V , RDS(ON) 21 mΩ
Ω
Ω
Ω
N-Ch Enhancement Mode Power MOSFET
25-Nov-2015 Rev.A
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS8820 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD-protected.
This device is suitable for the use as a uni-directional or
bi-directional load switch, facilitated by its common-drain
configuration.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
7
A
Pulsed Drain Current
1
IDM
25
A
Thermal Resistance from Junction to Ambient
RθJA
417
°C / W
Junction and Storage Temperature Range
TJ, TSTG
150, -55~150
°C
Lead Temperature for Soldering Purposes@1/8’’
from case for 10s
TL
260
°C
Notes:
1.
Repetitive rating:Pulse width limited by the junction temperature.
SOT-23
8820
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
0.09
0.18
B
2.10
2.65
H
0.35
0.65
C
1.20
1.40
J
0.08
0.20
D
0.89
1.17
K
0.6 REF.
E
1.78
2.04
L
0.95 BSC.
F
0.30
0.50


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