SSD30N03J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSD30N03J

30A, 30V, RDS(ON) 22m

N-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

µA

VDS=30V, VGS=0

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

2.5

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=15A

Dynamic Characteristics

Input Capacitance

Ciss

938

Output Capacitance

Coss

142

Reverse Transfer Capacitance

Crss

VDS=15V

VGS=0V

f=1MHz

Switching Characteristics

Total Gate Charge

17.5

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

4.1

VDS=15V

VGS=10V

ID=20A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=15V

VGS=10V

RG=3

RL=0.75

ID=2A

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

1.2

VGS=0, IS=10A

Continuous Drain-Source Diode

Forward Current

Pulsed Drain-Source Diode

Forward Current

ISM

Notes:

Pulse test：Pulse width≦300µs, duty cycle≦2%.

SSD30N03J Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSD30N03J Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3

Datasheet Download

Link URL