SSD75N06J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSD75N06J

75A, 60V, RDS(ON) 11.5m

N-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Drain-Source Leakage Current

IDSS

µA

VDS=60V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

2.7

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

RDS(ON)

9.1

11.5

VGS=10V, ID=30A

Forward Transconductance

gfs

VDS=25V, ID=30A

Dynamic Characteristics

Input Capacitance

Ciss

2350

Output Capacitance

Coss

237

Reverse Transfer Capacitance

Crss

205

VDS=25V

VGS=0

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=30V

VGS=10V

ID=30A

Turn-on Delay Time

Td(on)

Turn-on Rise Time

Turn-off Delay Time

Td(off)

Turn-off Fall Time

VDD=30V

VGS=10V

RG=2.5

RL=15

ID=2A

Source-Drain Diode Characteristics

Diode Forward Voltage

VSD

1.2

IS=30A, VGS=0

Continuous Source Current

Pulsed Source Current

ISM

300

Notes:

L=0.5mH, VDD=30V, VG=10V, RG=25 , Starting TJ=25℃.

Pulse Test: Pulse width≦300µs, duty cycle≦2%.

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