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SSG3110 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG3110 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSG3110 2.2A, 100V, RDS(O ) 310 mΩ Ω Ω Ω Dual- Enhancement Mode Power MOSFET 02-Sep-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSG3110 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most synchronous buck converter applications. FEATURES Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green Device Available PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TA=25°C 2.2 Continuous Drain Current@ VGS=10V 1 TA=70°C ID 1.5 A Pulsed Drain Current 3 IDM 5.5 A Power Dissipation@ TA=25°C PD 1.5 W Maximum Thermal Resistance from Junction to Ambient 1 83 Maximum Thermal Resistance from Junction to Ambient RθJA 135 °C / W Maximum Thermal Resistance from Junction to Case 1 RθJC 50 °C / W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C G S G S D D D D SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.70 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. |
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