 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF7304 Datasheet(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF7304 Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 6 page  128 IRF7304 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 1.8 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– -14 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V trr Reverse Recovery Time ––– 56 84 ns TJ = 25°C, IF = -2.2A Qrr Reverse RecoveryCharge ––– 71 110 µC di/dt = 100A/µs ton Forward Turn-On Time Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 6.0 ––– LD Internal Drain Inductance ––– 4.0 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.090 VGS = -4.5V, ID = -2.2A ––– ––– 0.140 VGS = -2.7V, ID = -1.8A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 4.0 ––– ––– S VDS = -16V, ID = -2.2A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V Qg Total Gate Charge ––– ––– 22 ID = -2.2A Qgs Gate-to-Source Charge ––– ––– 3.3 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 9.0 VGS = -4.5V, See Fig. 6 and 12 td(on) Turn-On Delay Time ––– 8.4 ––– VDD = -10V tr Rise Time ––– 26 ––– ID = -2.2A td(off) Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω tf Fall Time ––– 33 ––– RD = 4.5Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance ––– 610 ––– VGS = 0V Coss Output Capacitance ––– 310 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) A Pulse width ≤ 300µs; duty cycle ≤ 2%. ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) To Order Next Data Sheet Index Previous Datasheet |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
