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SSG4503J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4503J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page  Elektronische Bauelemente SSG4503J N-Ch: 6.9A, 30V, RDS(ON) 28 mΩ Ω Ω Ω P-Ch: -6.3A, -30V, RDS(ON) 36 mΩ Ω Ω Ω N & P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G Q4503 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Advanced Power MOSFETs provide the designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. SOP-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Low RDS(on) Provides Higher Efficiency and Longer Battery Life Low Thermal Impedance Copper Lead Frame Fast Switching Speed High Performance Trench Technology MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 4K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Rating Parameter Symbol N-CH P-CH Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 V TA =25°C 6.9 -6.3 A Continuous Drain Current 1 TA =70°C ID 5.5 -5 A Pulsed Drain Current 2 IDM 20 -20 A Total Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Thermal Resistance Rating Thermal Resistance from Junction to Ambient RθJA 89 °C/ W SOP-8 Date Code Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.70 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.17 0.25 N 0.25 REF. G 1.27 TYP. |
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