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TP847LED03 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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TP847LED03 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 4 page ![]() JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03E Plastic-Encapsulate Transistors TP847LED03 TRANSISTOR (NPN) FEATURE Low Current Low Voltage Ultra Small SMD Plastic Package Complementary to TP857LED03 For General-purpose Switching and Amplification MARKING: D5 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current 100 mA PC Collector Power Dissipation 100 mW RΘJA Thermal Resistance from Junction to Ambient 1250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=30V, IE=0 15 nA Emitter cut-off current IEBO VEB=5V, IC=0 15 nA DC current gain hFE*VCE=5V, IC=2mA 220 475 Collector-emitter saturation voltage VCE(sat)1*IC=10mA, IB=0.5mA 0.2 V VCE(sat)2*IC=100mA, IB=5mA 0.4 V Base-emitter saturation voltage VBE(sat)1*IC=10mA, IB=0.5mA 0.7 V VBE(sat)2*IC=100mA, IB=5mA 0.9 V Base-emitter voltage VBE1* VCE=5V, IC=2mA 0.7 V VBE2*VCE=5V, IC=10mA 0.77 V Transition frequency fT VCE=5V,IC=10mA,f=100MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 2.5 pF Noise figure NF VCE=5V, IE=0.2mA, f=1kHz, RS=1kΩ,B=200Hz 10 dB *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. WBFBP-03E 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com B,Nov,2016 D5 |
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