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74HCT2G66 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # 74HCT2G66
Description  Bilateral switches
PDF  20 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HCT2G66 Datasheet(HTML) 4 Page - NXP Semiconductors

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2004 May 19
4
Philips Semiconductors
Product specification
Bilateral switches
74HC2G66; 74HCT2G66
MNB004
handbook, halfpage
2
1
1
1
1
X1
6
5
7#
1
X1
#
3
Fig.3 IEC logic symbol.
handbook, halfpage
MNB005
GND
nZ
nY
nE
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C the value of Ptot derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC2G66
74HCT2G66
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
10.0
4.5
5.0
5.5
V
VI
input voltage
0
−
VCC
0
−
VCC
V
VO
output voltage
0
−
VCC
0
−
VCC
V
Tamb
ambient
temperature
see DC and AC
characteristics per device
−40
+25
+125
−40
+25
+125
°C
tr,tf
input rise and fall
times
VCC = 2.0 V
−−
1000
−−−
ns
VCC = 4.5 V
−
6.0
500
−
6.0
500
ns
VCC = 6.0 V
−−
400
−−−
ns
VCC = 9.0 V
−−
250
−−−
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+11.0
V
IIK
input diode current
VI < −0.5 V or VI >VCC + 0.5 V; note 1
−±20
mA
IOK
output diode current
VO < −0.5 V or VO >VCC + 0.5 V; note 1
−±20
mA
IO
output source or sink current
−0.5V<VO <VCC + 0.5 V; note 1
−±25
mA
ICC, IGND
VCC or GND current
note 1
−±30
mA
Tstg
storage temperature
−65
+150
°C
Ptot
power dissipation of package
Tamb = −40 °C to +125 °C; note 2
−
300
mW
Ps
power dissipation per switch
−
100
mW



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