CSF40S45PT datasheet(1/3 Pages) CITC

Part #	CSF40S45PT

Description	40A MOS Schottky Rectifier

PDF	3 Pages

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Manufacturer	CITC [Chip Integration Technology Corporation]

Direct Link	http://www.citcorp.com.tw/english/index.php

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1 / 3 page

1

Document ID : DS-11K045

Revised Date : 2017/04/05

Revision : C

Main Product Characteristics

I

F ( AV )

2 X 20A

V

R R M

T

J

V

F ( Ty p )

45V

150

OC

0.41V

40A MOS Schottky Rectiﬁer

CSF40S45PT

Chip Integration Technology Corporation

Forward Voltage Drop (per diode)

Reverse Current (per diode)

Parameter

I

O

I

F S M

I

R R M

T

S T G

Forward Rectiﬁed Current (total device)

Forward Surge Current (per diode)

Thermal Resistance (per diode)

Storage Temperature

Parameter

8.3ms single half sine-wave

superimposed on rate load (JEDEC method)

Condition

Symbol

CSF40S45PT

UNIT

-55 ~ +150

40

340

A

O C/W

O C

2

R

θ J C

Junction to case

Peak Repetitive Reverse Surge Current

A

2

Working peak reverse voltage

V

RWM

45

V

F

I

R

V

= 45V , T = 25

OC

R

J

V

= 45V , T = 125

OC

R

J

Condition

Symbol

TYP.

UNIT

100

0.5

mV

mA

MIN.

MAX.

I = 20A, T = 25

OC

F

J

I = 20A, T = 125

OC

F

J

500

(per diode)

410

Junction to ambient

R

θ J A

50

T

J

O C

Operating Junction Temperature

I = 3A, T = 25

OC

310

445

■ Electrical Characteristics

Rating at 25

OC ambient temperature unless otherwise speciﬁed.

Pulse width 2us, 1000Hz, square wave

at TA 25oC,10 cycles

Reverse Breakdown Voltage (per diode)

F

J

IR = 0.5mA, TJ = 25

OC

V

BR

V

45

0.1

-55 ~ +150

■ Maximum Ratings

Rating at 25

OC ambient temperature unless otherwise speciﬁed.

■ Circuit Diagram

50

■ Outline

TO-247

Marking code

PIN 1

PIN 3

PIN 2

0.640(16.25)

MAX.

0.094(2.4)

0.071(1.8)

0.222(5.65)

0.055(1.4)

0.039(1.0)

0.118(3.0)

0.087(2.2)

0.083(2.1)

0.075(1.9)

0.209(5.30)

0.165(4.20)

0.033(0.85)

0.018(0.45)

0.177(4.5)

MAX.

0.207(5.25)

Φ0.150(3.8)

MAX

1

2

3

0.126(3.2)

0.110(2.8)

■ Features

Low power loss, high efficiency.

•

High current capability, low forward voltage drop.

•

High surge capability.

•

Guardring for overvoltage protection.

•

Ultra high-speed switching.

•

Silicon epitaxial planar chip, metal silicon junction.

•

Lead free in compliance with EU RoHS.

•

■ Mechanical data

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-247 molded plastic body over

passivated chip.

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

.

• Weight : Approximated 5.60 gram

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